{"product_id":"abb-ac10272001r0101-5sxe10-0181-5shy55l4500-igct-power-module","title":"ABB AC10272001R0101\/5SXE10-0181\/5SHY55L4500 IGCT Power Module","description":"\u003ch3\u003e\u003cstrong\u003eOverview\u003c\/strong\u003e\u003c\/h3\u003e\n\u003cp\u003eThe\u003cspan\u003e \u003c\/span\u003e\u003cstrong\u003eAC10272001R0101\u003c\/strong\u003e\u003cspan\u003e \u003c\/span\u003eIGCT assembly from ABB integrates a press-pack IGCT device, a dedicated gate control unit, and matched auxiliary components into a unified high-power switching solution. Built around the\u003cspan\u003e \u003c\/span\u003e\u003cstrong\u003e5SHY55L4500\u003c\/strong\u003e\u003cspan\u003e \u003c\/span\u003eIGCT and the\u003cspan\u003e \u003c\/span\u003e\u003cstrong\u003e5SXE10-0181\u003c\/strong\u003e\u003cspan\u003e \u003c\/span\u003egate driver, this configuration is engineered for applications requiring extreme current capability, high blocking voltage, and predictable thermal behavior under continuous heavy load.\u003c\/p\u003e\n\u003cp\u003eThis assembly is commonly deployed in converter systems where reliability, low conduction losses, and precise turn-off control are critical design constraints.\u003c\/p\u003e\n\u003ch3\u003e\u003cstrong\u003eAssembly Composition\u003c\/strong\u003e\u003c\/h3\u003e\n\u003cp\u003eThe module set consists of the following matched ABB components:\u003c\/p\u003e\n\u003cp\u003eThe\u003cspan\u003e \u003c\/span\u003e\u003cstrong\u003eAC10272001R0101\u003c\/strong\u003e\u003cspan\u003e \u003c\/span\u003eassembly housing and interface hardware, designed for press-pack IGCT integration and optimized mechanical clamping force distribution.\u003c\/p\u003e\n\u003cp\u003eThe\u003cspan\u003e \u003c\/span\u003e\u003cstrong\u003e5SHY55L4500\u003c\/strong\u003e\u003cspan\u003e \u003c\/span\u003epress-pack IGCT device, providing high blocking voltage and high average current capability with uniform current distribution across the silicon wafer.\u003c\/p\u003e\n\u003cp\u003eThe\u003cspan\u003e \u003c\/span\u003e\u003cstrong\u003e5SXE10-0181\u003c\/strong\u003e\u003cspan\u003e \u003c\/span\u003egate unit, supplying high peak gate current and fast negative gate turn-off to ensure stable commutation and short tail currents.\u003c\/p\u003e\n\u003cp\u003eTogether, these elements form a coordinated switching solution rather than a standalone semiconductor, minimizing parasitic effects and improving operational margins in high-energy circuits.\u003c\/p\u003e\n\u003ch3\u003e\u003cstrong\u003eKey Technical Characteristics\u003c\/strong\u003e\u003c\/h3\u003e\n\u003cp\u003eThis IGCT assembly is optimized for high-power conversion environments where traditional SCRs or IGBTs are insufficient.\u003c\/p\u003e\n\u003cp\u003eLow on-state losses are achieved through press-pack IGCT technology, reducing thermal stress during continuous conduction.\u003cbr\u003eHigh surge current withstand capability supports short-time overloads and grid disturbances.\u003cbr\u003eFast and controlled turn-off behavior enables precise current shaping in line-commutated and self-commutated converters.\u003cbr\u003eSymmetrical voltage blocking simplifies series connection in multi-level or valve stack configurations.\u003cbr\u003eMechanical press-pack design eliminates bond wires, significantly improving cycling lifetime and failure predictability.\u003c\/p\u003e\n\u003ch3\u003e\u003cstrong\u003eElectrical Ratings\u003c\/strong\u003e\u003c\/h3\u003e\n\u003cp\u003eThe following parameters reflect typical operating values for the\u003cspan\u003e \u003c\/span\u003e\u003cstrong\u003e5SHY55L4500\u003c\/strong\u003e\u003cspan\u003e \u003c\/span\u003eIGCT within the\u003cspan\u003e \u003c\/span\u003e\u003cstrong\u003eAC10272001R0101\u003c\/strong\u003e\u003cspan\u003e \u003c\/span\u003eassembly. Final design limits depend on cooling conditions and gate drive configuration.\u003c\/p\u003e\n\u003cp\u003eRated repetitive peak blocking voltage up to 4500 V\u003cbr\u003eAverage on-state current capability approximately 1800 A\u003cbr\u003eSurge current withstand exceeding 30 kA (10 ms, half-sine)\u003cbr\u003eMaximum on-state voltage typically below 3 V at nominal current\u003cbr\u003eGate trigger voltage typically below 2 V\u003cbr\u003eHigh negative gate current capability via\u003cspan\u003e \u003c\/span\u003e\u003cstrong\u003e5SXE10-0181\u003c\/strong\u003e\u003cspan\u003e \u003c\/span\u003efor secure turn-off\u003c\/p\u003e\n\u003ch3\u003e\u003cstrong\u003eThermal and Cooling Characteristics\u003c\/strong\u003e\u003c\/h3\u003e\n\u003cp\u003eThe press-pack structure enables efficient heat transfer directly from the silicon to the cooling interface.\u003c\/p\u003e\n\u003cp\u003eMaximum junction temperature up to 125 °C\u003cbr\u003eOperating temperature range from −40 °C to +125 °C\u003cbr\u003eCompatible with liquid-cooled or high-performance forced-air heat sinks\u003cbr\u003eLow thermal resistance due to double-sided cooling geometry\u003c\/p\u003e\n\u003cp\u003eThis thermal robustness allows stable operation in applications with frequent load cycling and high RMS currents.\u003c\/p\u003e\n\u003ch3\u003e\u003cstrong\u003eMechanical and Insulation Properties\u003c\/strong\u003e\u003c\/h3\u003e\n\u003cp\u003ePress-pack IGCT construction with axial clamping\u003cbr\u003eHigh mechanical endurance under vibration and thermal cycling\u003cbr\u003eTypical insulation withstand level of 5 kV AC for one minute\u003cbr\u003eDesigned for installation in enclosed cabinets with controlled creepage and clearance\u003c\/p\u003e\n\u003cp\u003eThe assembly is intended for professional integration into converter stacks rather than open PCB mounting.\u003c\/p\u003e\n\u003ch3\u003e\u003cstrong\u003eTypical Applications\u003c\/strong\u003e\u003c\/h3\u003e\n\u003cp\u003eThe\u003cspan\u003e \u003c\/span\u003e\u003cstrong\u003eAC10272001R0101\u003c\/strong\u003e\u003cspan\u003e \u003c\/span\u003eIGCT assembly is used in systems where high energy flow and long service life are mandatory.\u003c\/p\u003e\n\u003cp\u003eHVDC converter valves and static VAR systems\u003cbr\u003eMedium- and high-voltage variable-speed drive inverters\u003cbr\u003eElectric arc furnaces and large rectifier units\u003cbr\u003eRailway traction converters and propulsion systems\u003cbr\u003eLarge synchronous motor excitation and grid-interface converters\u003c\/p\u003e\n\u003ch3\u003e\u003cstrong\u003eFAQ\u003c\/strong\u003e\u003c\/h3\u003e\n\u003cp\u003e\u003cstrong\u003eIs this assembly suitable as a direct replacement for GTO devices?\u003c\/strong\u003e\u003cbr\u003eYes. In many legacy designs, IGCT assemblies such as\u003cspan\u003e \u003c\/span\u003e\u003cstrong\u003e5SHY55L4500\u003c\/strong\u003e\u003cspan\u003e \u003c\/span\u003eoffer lower losses, simplified gate control, and improved reliability compared to GTOs, subject to mechanical and gate unit compatibility.\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003eDoes the gate unit need to be ordered separately?\u003c\/strong\u003e\u003cbr\u003eIn this configuration, the\u003cspan\u003e \u003c\/span\u003e\u003cstrong\u003e5SXE10-0181\u003c\/strong\u003e\u003cspan\u003e \u003c\/span\u003egate driver is matched to the IGCT device. Always confirm the exact delivery scope before installation.\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003eIs this module intended for high-frequency switching?\u003c\/strong\u003e\u003cbr\u003eIGCTs are optimized for low-to-medium switching frequencies, typically in the hundreds of Hz to low kHz range, where high current and voltage dominate design priorities.\u003c\/p\u003e","brand":"ABB","offers":[{"title":"Default Title","offer_id":42968174854234,"sku":"AC10272001R0101\/5SXE10-0181\/5SHY55L4500","price":258.0,"currency_code":"USD","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0612\/4601\/3530\/files\/AC10272001R01015SXE10-01815SHY55L45002.jpg?v=1771989340","url":"https:\/\/www.plcmasters.com\/vi\/products\/abb-ac10272001r0101-5sxe10-0181-5shy55l4500-igct-power-module","provider":"PLC Masters Ltd.","version":"1.0","type":"link"}